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[Analysis Case] Theoretical Calculation of Fe/MgO/Fe Junction System (C0583)

Investigation of TMR ratio and the behavior of spin and charge in the Fe/MgO/Fe junction system using first-principles calculations with the NEGF method!

Our company is conducting theoretical calculations (C0583) on the Fe/MgO/Fe junction system that demonstrates the tunnel magnetoresistance effect of MRAM. Tunnel magnetoresistance (TMR) is a phenomenon where the electrical resistance changes depending on the orientation of magnetization in ferromagnetic layers separated by a thin insulating layer, and applications in magnetic resistance memory (MRAM) are being advanced. Through simulations, it is also possible to evaluate the effects of behaviors under bias application, strain at the interface, and oxygen vacancies on the physical properties of TMR. 【Measurement Methods and Processing Methods】 ■ Computational Science, AI, Data Analysis *For more details, please download the PDF or feel free to contact us.